CHELMSFORD, Mass., 25 Dec. 2007.Hittite Microwave Corp. in Chelmsford, Mass., is offering four double-balanced gallium arsenide metal semiconductor field-effect transistor (GaAs MESFET) mixers for use in test and measurement systems, military radios, commercial sensors, and transceiver infrastructure like fixed and mobile protocols such as WiMAX and VSAT applications.
The HMC557LC4 is a versatile passive double-balanced mixer that provides a LO to RF port isolation of 48dB and an input IP3 of +22dBm across the frequency range of 2.5 to 7 GHz. This mixer delivers an IF bandwidth of DC to 3 GHz while maintaining a conversion loss of 7dB.
The HMC558LC4 is a passive double-balanced mixer that provides an LO to RF port isolation of 45dB and an input IP3 of +24dBm across the frequency range of 5.5 to 14 GHz. This mixer is for wide IF bandwidth of DC to 6 GHz.
Both mixers are also offered in chip form as the HMC557 and the HMC558, and deliver a similar performance to their packaged counterparts.
The HMC557LC4 and HMC558LC4 are housed in 4x4 mm RoHS compliant surface mount packages and specified for operation over -40 to 85 degrees Celsius. For hybrid MIC and MCM assembly, the HMC557 and HMC558 die are available and specified for operation over the -55 to 85 C temperature range.
For more information contact Hittite online at www.hittite.com.
