TEWKSBURY, Mass., 12 Mar. 2009. Raytheon Company's Integrated Defense Systems (IDS) business won a phase-two contract to develop a gallium nitride (GaN) solid-state source for use in non-lethal weapons.
The Defense Department's Joint Non-Lethal Weapons Directorate (JNLWD) awarded the contract.
Raytheon's GaN technology is well suited to a wide range of DoD systems, including radar, electronic warfare, and communications.
"Our support of the JNLWD is for very high-frequency, millimeter-wave GaN to provide the warfighter with a lower-cost, lighter-weight, non-lethal engagement alternative," explains Michael Del Checcolo, vice president of engineering for Raytheon IDS.
Work on the contract will be conducted at IDS' semiconductor foundry located at the Integrated Air Defense Center, Andover, Mass.
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