COLORADO SPRINGS, Colo., 2 Sept. 2009. Aeroflex Colorado Springs in Colorado Springs, Colo., is introducing six radiation hardened (rad hard), high reliability solid state memory multi chip module (MCM) devices for military, space, and other high-rel applications.
Aeroflex is using its 16M/20M monolithic SRAM technology to create the SRAM multichip modules (MCMs) in one universal 132 ceramic quad flatpack (CQFP) package in devices ranging from 32 to 160 megabits.
With 20-nanosecond access time and 1.8-volt core voltage, the six high-rel SRAM MCMs offer low power consumption, fast access time, and Standard Microcircuit Drawing (SMD) guaranteed operating performance. All products resist total-dose radiation of as much as 100 kilorads, and are single-event latchup immune to 111Mev-cm2/mg.
Three of the memories employ embedded error detection and correction (EDAC) with user programmable auto scrubbing options, and range from 32 to 128 megabits with 20-nanosecond access times: the UT8ER1M32 32 megabit; UT8ER2M32 64 megabit; and UT8ER4M32 128 megabit.
For system designs using discrete EDAC, Aeroflex offers three memory products ranging from 40 to 160 megabit with 20-nanosecond access times: the UT8R1M39 40 megabit; UT8R2M39 80 megabit; and UT8R4M39 160 megabit.
The 132-lead package integrates as many as eight 16M or 20M memory die using both cavities of the 132-lead ceramic flatpack package. This technique increases bit density to save space and weight, and provides 20-nanosecond access.
The 20-nanosecond access time of the Aeroflex SRAMs allows for zero wait state interface to today's leading edge 32-bit microprocessors.
The first product offerings, the UT8ER1M32 and UT8R1M39, will be offered in a 132-lead flatpack, Q and V qualified and will be available to an SMD. Prototypes are available and production by the end of this year.
For more information contact Aeroflex online at www.aeroflex.com.
-- Posted by John Keller, jkeller@pennwell.com. www.milaero.com.
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