SUNNYVALE, Calif., 31 July 2010. The Microsemi Corp. RF Integrated Solutions (RFIS) segment in Sunnyvale, Calif., is introducing the model 0405SC-2200M silicon carbide (SiC) transistor with 2,200 Watts of peak RF power for high power UHF band pulsed radar applications.
The 0405SC-2200M transistor is a generation 3 chip in its geometry, materials, processing, and packaging, Microsemi officials say. It is designed in one-ended package for common gate 2,200 Watt Class AB performance in the UHF frequencies from 406 MHz to 450 MHz for UHF pulsed radar.
A hermetically sealed package built with high temperature gold metallization and wires provides reliability and improved system yields. Additional system benefits include simplified impedance matching, a 125 volt operating voltage, low conducting current, and high peak power for reduced system power.
Microsemi RFIS is the former Endwave Corp. Defense Electronics and Security (D&S) business. For more information contact Microsemi RFIS online at www.microsemi-rfis.com.