MONT-SAINT-GUIBERT, Belgium, 17 March 2011. CISSOID in Mont-Saint-Guibert, Belgium is introducing the Moon dual-high-temperature 40-volt N-channel metal oxide field effect transistor (MOSFET) power electronics device for high-temperature designs in aerospace, defense, and industrial applications.
The Moon high-temperature MOSFET operates in temperatures from -55 to 225 degrees Celsius, and comes in a small, hermetically sealed, surface-mount package. the device is able to switch currents as strong as 2 amps. At 225 C the device gate leakage current is less than 100 nano-amps, drainoff current is 3.5 micro-amps or less, and turn on delay time is 30 nanoseconds.
The CSOIC16 package and its pin-out are designed to reduce parasitic inductors and capacitors when using N-channel MOSFETs in a push-pull stage such as in DC-DC converters and motor drives.
For more information contact CISSOID online at www.cissoid.com.
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