New Opnext red laser diodes released

Feb. 24, 2012
FREMONT, Calif., Feb. 24, 2012. The Optoelectronics Company, a distributor of optoelectronic components, announced the release of two new, 638nm, high power, low operating current red laser diodes from Opnext, Inc.
FREMONT, Calif., Feb. 24, 2012. The Optoelectronics Company, a distributor of optoelectronic components, announced the release of two new, 638nm, high power, low operating current red laser diodes from Opnext, Inc. Opnext has upgraded its range of red laser diodes. These two new diodes offer higher temperature operation, shorter wavelengths and higher power in a smaller package.

Opnext's latest red laser diode, the HL63603TG has a wavelength of 638nm and an output power of 120mW. It is available in a 3.8mm package with single transverse mode. The HL63603TG red laser diode is also suitable for use in laser modules and optical measurement equipment and offers a high temperature operation at 60 degrees Centigrade and 120mW of optical output power in the 638nm wavelength band.

The HL63133DG red laser diode comes in a 5.6mm package, with 170mW optical output power at 40 degrees Centigrade in the 638nm wavelength band, and operates in the single transverse mode.

All Opnext laser diodes are RoHS compliant.

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