LOWELL, Mass., 9 Aug. 2012. M/A-COM Technology Solutions Inc. in Lowell, Mass., is introducing a power amplifier for S-band radar applications. Operating between 2.5 and 3.5 GHz, the MAAP-010171 is a two-stage, eight-Watt pulsed power amplifier matched to 50 ohms on input and output.
Each RF and microwave device is 100 percent RF tested to ensure performance compliance. The part is fabricated using M/A-COM Tech's high linearity pseudomorphic high electron mobility transistor (pHEMT) process. With gain of 27 decibels and efficiency of 38 percent, the MAAP-010171 is packaged in a 5-by-5-millimeter 20-Lead (PQFN) package for easy assembly.
"The MAAP-010171 is well positioned to be used as a power amplifier stage or as a driver stage in high-power pulsed radar applications," says Scott Vasquez, product manager at M/A-COM Tech. Production quantities and samples of MAAP-010171 are available from stock.
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M/A-COM Tech manufactures high-performance analog semiconductors for radio frequency (RF), microwave, and millimeter wave applications such as wireless infrastructure, optical communications, aerospace and defense, automotive, industrial, medical, and mobile devices. The company is certified to the ISO9001 international quality standard and ISO14001 environmental management standard.
For more information contact M/A-COM Tech online at www.macomtech.com.