Solid-state GaN RF amplifier for electronic warfare and radar offered by Comtech PST

MELVILLE, N.Y., 15 April 2013. Comtech PST Corp. in Melville, N.Y., is introducing the BME69189-20 high-power-density solid-state RF module for electronic warfare, radar transmitters, and communications applications where space, cooling, and power are limited.

The integrated RF gallium nitride (GaN) 6-to-18 GHz RF amplifier for RF and microwave applications has a of more than 20 Watts; gain at 20 Watts of more than 41 decibels; maximum RF input overdrive of 10 dbm; and built-in test that includes composite fault indication, over current, and over voltage.

The RF GaN amplifier has a seven-pin DC control interface; DC input of 28 volts DC; standby power of 35 Watts; DC to RF efficiency of 14 percent; operates in temperatures from -50 to 55 degrees Celsius at the baseplate; and meets MIL-STD-810F for shock and vibration.

The GaN RF amplifier weighs five pounds and measures 6.56 by 3.5 by 0.84 inches.

For more information contact Comtech PST online at www.comtechpst.com.