GaN-on-SiC HEMT for L-band pulsed radar applications introduced by M/A-COM Technology

LOWELL, Mass., 21 May 2013. M/A-COM Technology Solutions Inc. in Lowell, Mass., is introducing the MAGX-001214-500L00 gallium nitride-on-silicon carbide high-electron mobility transistor (GaN SiC HEMT) for L-band pulsed radar applications.

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