CHELMSFORD, Mass., 25 July 2013. Hittite Microwave Corp. in Chelmsford, Mass., is introducing four gallium nitride (GaN) microwave/millimeter wave integrated circuit (MMIC) power amplifiers for radar systems operating in the 2 to 20 GHz frequency range, as well as for test instruments and communications systems.
The HMC1086F10 is a 25 W GaN RF and microwave power amplifier operates between 2 and 6 GHz, and comes in a 10-lead flange mount package. The amplifier typically provides 23 dB of small signal gain, +44 dBm saturated output power, and delivers +46 dBm output IP3 at +33 dBm output power per tone.
The amplifier draws 1100 milliamps quiescent current from a 28-volt DC supply. The HMC1086 is the die version of the HMC1086F10. This 25-Watt GaN MMIC power amplifier also operates between 2 and 6 GHz and provides 22 dB of small signal gain, +44 dBm of saturated output power, and +48 dBm output IP3 at +33 dBm output power per tone. Both amplifiers have RF I/Os that are DC blocked and matched to 50 Ohms.
The HMC1087F10 is an 8-Watt GaN MMIC power amplifier that operates between 2 and 20 GHz, and comes in a 10-lead flange mount package. The amplifier typically provides 11 dB of small signal gain, +39 dBm of saturated output power, and +43 dBm output IP3 at +28 dBm output power per tone. The amplifier draws 850 milliamps quiescent current from a 28-volt DC supply.
The HMC1087 is the die version of the HMC1087F10. This 8-Watt GaN MMIC power amplifier also operates between 2 and 20 GHz and provides 11 dB of small signal gain, +39 dBm of saturated output power, and +45 dBm output IP3 at +29 dBm output power per tone. Both amplifiers have RF I/Os that are matched to 50 Ohms.
The HMC1086 and the HMC1087 amplifiers have compact die sizes, high output power capability and simplified biasing, which make them for integration into high power density Multi-Chip-Module (MCM) and subsystem applications.
For more information contact Hittite Microwave online at www.hittite.com.
