MORRISVILLE, N.C., 27 Dec. 2013. Nitronex LLC in Morrisville, N.C., is introducing the NPA1006 broadband gallium nitride (GaN) amplifier for military communications, radar, satellite communications, point-to-point microwave, broadband, and commercial wireless applications.
The NPA1006 is a 28-volt, 20 MHz to 1 GHz, 15 Watt RF and microwave amplifier with 14dB gain and 60 percent drain efficiency. It is housed in an industry-standard 6-by-5-millimeter DFN plastic package.
The thermal resistance of the NPA1006 is 4.6-degreeC/W, representing for this power level. The amplifier input is internally matched to 50 Ohms for integration; the output needs a two-element external match for full band coverage.
The NPA1006 uses Nitronex's 28-volt NRF1 GaN HEMT process. Nitronex's patented SIGANTIC GaN-on-Si process uses an industry standard 4-inch silicon substrate.
For more information contact Nitronex online at www.nitronex.com.