Isolated DC-DC converters for semiconductor drive circuits and hybrid power introduced by GE

July 28, 2014
DALLAS, 28 July 2014. The GE Critical Power business in Dallas is introducing the SHHN000A3CL isolated DC-DC converters for insulated-gate bipolar transistors and other semiconductor device drive circuits, or in hybrid power architectures and industrial applications.
DALLAS, 28 July 2014. The GE Critical Power business in Dallas is introducing the SHHN000A3CL isolated DC-DC converters for insulated-gate bipolar transistors and other semiconductor device drive circuits, or in hybrid power architectures and industrial applications.

The SHHN000A3CL provides board designers with a bipolar dual-output power electronics module in a 1-by-1-inch brick. The unit has an input voltage range of 9 to 36 volts DC and a bipolar dual output, regulated output voltage at 15 volts DC and -15 volts DC, 9 Watts output power and a 0.3-amp output current.

The wide input range supported by GE's SHHN000A3CL converter allows for sourcing consistency, equipping users with one product that can fit into several sockets. The available configurations of the module-in through-hole and surface-mount formats-further add to the flexibility of the converters.

Standard features include remote on/off, remote sense and output voltage adjustment. In addition, the module is self-protected with output over-current and over-voltage, over-temperature and input under-voltage shutdown control. Available optional has include negative or positive on/off logic and surface-mount connections.

The outputs of the SHHN000A3CL are isolated from the input, allowing versatile polarity configurations and grounding connections. The unit's built-in filtering for both input and output minimizes the need for external filtering components and reduces the overall solution footprint.

For more information contact GE Critical Power online at www.gecriticalpower.com.

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