Plastic packaged MMIC devices for electronic warfare (EW) and unmanned vehicles offered by Microsemi

July 10, 2017
ALISO VIEJO, Calif. – Microsemi Corp. in Aliso Viejo, Calif., is introducing a family of wideband plastic packaged and chip monolithic microwave integrated circuit (MMIC) devices for size-constrained aerospace, defense, and industrial applications like electronic warfare (EW), microwave radio, and unmanned aerial vehicles (UAVs).

ALISO VIEJO, Calif. – Microsemi Corp. in Aliso Viejo, Calif., is introducing a family of wideband plastic packaged and chip monolithic microwave integrated circuit (MMIC) devices for size-constrained aerospace, defense, and industrial applications like electronic warfare (EW), microwave radio, and unmanned aerial vehicles (UAVs).

Microsemi's new MMIC wideband LNA, distributed wideband MMIC power amplifier and wideband MMIC switches include four plastic packaged low noise amplifiers (LNAs), MMA040PP5, MMA041PP5, MMA043PP4 and MMA044PP3; a wideband power amplifier (PA) chip, MMA053AA; and two plastic packaged switches, MMS006PP3 and MMS008PP3, and are for EW, test and measurement, high-linearity microwave radio, UAVs, and other military communications applications.

Global market research and consulting company Strategy Analytics estimates that gallium arsenide (GaAs) MMICs sold into the EW, radar, and microwave communications markets will reach $500 million by 2019, company officials say.

The packaged amplifiers include two distributed LNAs (MMA040PP5 and MMA041PP5) which outperform competitive parts over frequencies from DC to 27 GHz with gain of 17 decibels (dB) and OIP3 of 35 decibel-milliwatts (dBm). They are packaged in 5-millimeter plastic QFN.

Related: MMIC devices for defense, aerospace, and communications introduced by Microsemi

The two wideband LNAs (MMA043PP4 and MMA044PP3) provide a noise figure (NF) from 0.5 to 18 GHz with typical NF below 2 dB and no more than 2.5 dB at the band edge.

Two wideband GaAs switches (MMS006PP3 and MMS008PPS) have a frequency range from DC to 20 Ghz, and are housed in 3-millimeter plastic QFN packages. The devices require minimal off-chip logic to control simplifying system level integration.

The wideband PA chip (MMA053AA) maintains flat gain of 17 dB and OIP3 of 35 dBm from DC to 8 GHz for demanding system and module line-up requirements with minimal DC power consumption.

For more information contact Microsemi online at www.microsemi.com.

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