Mimix Broadband Inc. in Houston is introducing a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) three-stage power amplifier with a temperature-compensated output detector. Using 0.15-micron-gate-length GaAs pseudomorphic high-electron-mobility-transistor (pHEMT) device technology, the power amplifier covers the 17 to 25 GHz frequency bands and has a signal gain of 20 decibels with +28 dBm P1dB compression point. The XP1022 die includes on-chip ESD protection and is available in a RoHS-compliant 4-by-4-millimeter QFN Surface Mount Package for RF and thermal properties. This power amplifier, identified as XP1022-BD for the bare die device or XP1022-QF for the QFN package, is for wireless communications applications such as millimeter-wave point-to-point radio, local multipoint distribution services (LMDS), and satellite applications. Mimix performs 100 percent RF, DC, and output-power testing on the XP1022, as well as 100 percent visual inspection to MIL-STD-883 method 2010 for the bare die. The chips also have surface passivation to protect and provide rugged parts with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die-attach process. For more information contact Mimix Broadband online at www.mimixbroadband.com.