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Aethercomm in San Marcos, Calif., is offering is a high-power, broadband, gallium nitride (GaN) RF amplifier for broadband military and commercial applications that operates from 500 MHz to 2500 MHz called the SSPA 0.5-2.5-50. The amplifier offers high power over a multioctave bandwidth. This amplifier was designed for broad band jamming and communications systems platforms. It is packaged in a modular housing that is about 3.4 inches wide, 6.4 inches long, and 1.06 inches high. This amplifier has a typical P3dB of 40–50 watts at room temperature. Noise figure at room temperature is 10.0 dB typical. This amplifier offers a typical gain of 53 dB with a typical gain flatness of ±2.5 dB. The power and gain flatness across the band is extremely flat for the bandwidth. Input VSWR is 2.0:1 maximum. Class AB quiescent current is ~2.0 amps typical employing a +28 volts DC supply. This power amplifier operates from a +28 volts DC input voltage. This solid-state power amplifier includes an external DC blanking command that enables the unit in 500 nanoseconds and disables the module in 3000 nanoseconds typical. Standard features include over/under voltage protection and reverse polarity protection. The output is protected from an open or short circuit presented to this port with no damage. Input/output RF connectors are SMA female. Other connector types can be configured for airborne applications. DC and command voltages are accessible via a nine-pin DSUB connector. The amplifier operates from -40 to 85 degrees Celsius base plate. For more information, visit Aethercomm online at www.aethercomm.com.