POWER ELECTRONICS: Cree offers silicon carbide MOSFET for high-voltage circuits

Cree Inc. in Durham, N.C., is introducing a silicon carbide power metal oxide silicon field-effect transistor (MOSFET) power electronics device that can help design engineers develop high-voltage circuits with fast switching speeds and low switching losses in industrial power applications, such as high-voltage power supplies and power conditioning.

The CMF20120D siliconcarbide MOSFET provides blocking voltages of as much as 1200 volts. The device is for high-voltage electronics applications where energy efficiency is critical. Over the next several years, silicon carbide power switches and diodes also could expand into motor drive control, electric vehicles, and wind energy applications. The market for power semiconductors in these applications is roughly $4 billion, expected to reach $6 billion by 2015.

For more information visit Cree online at www.cree.com.

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February 2014
Volume 25, Issue 2
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