EL SEGUNDO, Calif., 14 Jan. 2015. Executives of semiconductor specialist Infineon Technologies AG in Neubiberg, Germany, have completed their acquisition of power electronics designer International Rectifier Corp. in El Segundo, Calif.
The acquisition for $3 billion cash, which was announced last August, is to boost Infineon's expertise in gallium nitride (GaN) on silicon power semiconductor technology. This combination will accelerate and solidify Infineon’s position in GaN discretes and GaN system solutions, officials say.
International Rectifier now is a wholly owned subsidiary of Infineon. The acquisition combines two power-management semiconductor companies, and will enable Infineon to complement its offerings broaden its range of products and grow its regional footprint, Infineon officials say.
International Rectifier’s expertise in low-power, energy-efficient insulated-gate bipolar transistors (IGBTs) and intelligent power modules, power metal oxide semiconductor field-effect transistors (MOSFETs), and digital power management ICs will integrate with Infineon’s offering in power devices and modules, officials say.
Related: Infineon to boost expertise in GaN power semiconductors in buy of International Rectifier
"The acquisition of International Rectifier is an important step for Infineon to foster our position as a global market leader in power semiconductors," says Infineon CEO Reinhard Ploss. "The acquisition helps us to accelerate our strategic approach from product thinking to system understanding."
The combined company is led by Reinhard Ploss, CEO; Arunjai Mittal, member of the management board regions, sales, marketing, strategy development and M&A; and Dominik Asam, CFO. The president of International Rectifier and of Infineon North America is Robert LeFort.
For more information contact Infineon online at www.infineon.com, or International Rectifier at www.irf.com.
