CAMARILLO, Calif., 17 July 2015. Opto Diode Corp. in Camarillo, Calif., is introducing the OD-110W GaAlAs near-infrared (IR) light-emitting diodes for night vision and surveillance applications.
The new near-IR light-emitting diodes (near-IRLEDs) feature a uniform optical beam with a typical peak emission wavelength of 850 nanometers and optical output of 140 milliwatts.
Designed for rugged applications such as harsh industrial environments or deployment in the field, these durable near-IRLEDs are housed in standard three-lead, TO-39 hermetically sealed packages and have gold plating on all surfaces. The four wire bonds are positioned on the die corners to minimize potential artifacts in imaging applications.
The chip size is 0.02 by 0.026 inches and all materials are RoHS compliant. Typical performance includes a half intensity beam angle of 110 degrees, forward voltage of 1.7 volts and rise and fall times of 20 nanoseconds each.
Related: Photodiode for stability after extreme ultraviolet conditions introduced by Opto Diode
For more information contact Opto diode online at www.optodiode.com.
