Simtek offers two 4-megabit nvSRAM memory devices

Dec. 1, 2007
Simtek Corp. in Colorado Springs, Colo., is offering two 4-megabit CMOS SONOS nvSRAM solid-state memory devices that deliver 40 percent better access times, four to eight times higher densities, and increased system performance over their predecessors.
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Simtek Corp. in Colorado Springs, Colo., is offering two 4-megabit CMOS SONOS nvSRAM solid-state memory devices that deliver 40 percent better access times, four to eight times higher densities, and increased system performance over their predecessors. The memory chips offer benefits for emerging solid-state drives (SSDs), hard disk drives, and other system memory architectures that require the speed of SRAM, density of DRAM, and non-volatility of flash memory. Simtek’s STK14EC8 (512Kbit x 8) and STK14EC16 (256Kbit x 16) devices deliver fast access SRAM performance at speed grades of 15, 25, and 45 nanoseconds while offering non-volatile backup on any power disruption. The 4-megabit devices combine Simtek’s expertise in non-volatile static random access memory (nvSRAM) design with Cypress Semiconductor’s silicon oxide nitride oxide silicon (SONOS) fabrication expertise and are the result of a joint development agreement. Key features of the device include 15-, 25-, and 45-nanosecond read access and R/W cycle time; unlimited read/write endurance; automatic non-volatile STORE on power loss; non-volatile STORE under hardware or software control; automatic RECALL to SRAM on power up; unlimited RECALL cycles; 200K STORE cycles endurance; 20-year non-volatile data retention; and a single 3.3-volt power supply. The STK14EC8 is available in both the 44-pin thin small outline package II (TSOPII) and 48-pin ball grid array (BGA) packages. The STK14EC16 is available in the 44 and 54-pin TSOPII, as well as the 48-pin BGA package. For more information, contact Simtek online at www.simtek.com.

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