GaN FET with enhanced thermal performance for advanced power conversion applications introduced by EPC
EL SEGUNDO, Calif. – Efficient Power Conversion Corp. (EPC) in El Segundo, Calif., is introducing the EPC2367 next-generation 100-volt gallium nitride (GaN) field-effect transistor (FET) for power conversion applications.
Designed for demanding applications such as 48-volt DC-DC converters, motor drives, and high-power computing, the EPC2367 outperforms traditional silicon metal oxide field effect transistors (MOSFETs).
The EPC2367 offers ultra-low on-resistance (RDS(on)); a 3.3-by-3.3-millimeter QFN package; switching figures of merit (FoM); enhanced thermal performance; and temperature cycling reliability.
Hard and soft switching
The EPC2367 has been tested in hard- and soft-switching power conversion applications. Performance results demonstrate higher efficiency, with significant power loss reductions.
In a 1 MHz, 1.25 kW system, EPC2367 reduces power losses while achieving 1.25 times the output power compared to previous gallium nitride (GaN) and silicon MOSFET alternatives.
For more information contact EPC online at https://epc-co.com/epc/.
