Radiation-tolerant MOSFETs for spacecraft operating in low-Earth orbit introduced by Infineon Technologies
MUNICH – Infineon Technologies AG in Munich is introducing radiation-tolerant P-channel power metal-oxide-semiconductor field-effect transistors (MOSFETs) for low-Earth-orbit (LEO) space applications.
The devices help engineers with fast time-to-market designs that use small lightweight components with radiation performance suitable for missions lasting two to five years.
The 60 V P-channel MOSFETs come in low-cost plastic packaging, and are qualified for space applications according to the AEC-Q101 standard. Additional package tests such as outgas and salt atmosphere tests are included.
Single-effect events
These radiation-tolerant devices are rated for single event effects (SEE) at 46 MeV·cm²/mg LET and a total ionizing dose (TID) of 30 to 50 kilorads (Si). The operating temperature rating is -55 to 175 degrees Celsius.
Infineon offers four different N-channel MOSFETs with two voltage versions -- 60 and 150 volts along with the 60-volt P-channel. For more information contact Infineon online at www.infineon.com/cms/en/product/high-reliability/new-space/power/rad-tolerant-mosfets.
