Sensitron designed a GaN half bridge with an integrated gate drive using the latest generation of GaN FETs. The ultra small, lightweight package (1.10" x 0.70" x 0.14") uses power flip chip on board with topside cooling, allowing for optimal thermal performance and high power density. Available in various package options or custom bridge configurations, contact us for your design requirements.
Perform on platform functional system demonstrations and testing in the field with LCR’s RTS line of rugged chassis for VPX / SOSA aligned payloads. The chassis enables testing at or near application level environmental conditions and helps streamline transition to deployment in vehicle mounted installations. Easy access allows backplane and I/O configuration changes.
The V6061 & V6063 are two NEW, impressive, SOSA-Aligned 3U VPX solutions from New Wave DV. Featuring the Xilinx® Versal® ASoC/FPGA (Prime & AI options), NVIDIA® (Mellanox®) network interface device, and high-bandwidth optical IO options, these modules provide system developers the cutting-edge technology required for heterogeneous computing and high-performance processing. COTS or Custom options.
PEI-Genesis offers the K and B Series from LEMO to support industrial environments where a quick mating connector is needed. Both series have a high packing density for space saving and 360° screening for full EMI shielding. The K-Series is ideal for outdoor applications, while the B-Series is designed for indoor or vacuum-tight applications. PEI-Genesis is fully stocked with both series.
OFS newest innovation, DirectLase Premium Yb-doped Optical Fibers for directed energy fiber-laser systems. DirectLase Yb-doped gain fibers were developed to provide high-reliability gain fibers for the directed energy market providing industry-leading performance in high-power, narrow-linewidth fiber lasers.
As your supply chain partner, SMARTsemi understands your challenges sourcing components for long-life applications, and we’ve aligned our priorities with yours. We’ve been producing memory components in our global facilities for 20 years. Today, we assemble, burn-in, test, and pack 150 Million+ devices per year. Check out our comprehensive selection of DDR3 and DDR4 DRAM.