Silicon carbide MOSFET power electronics device introduced by Cree for high-voltage circuits

DURHAM, N.C., 18 Jan. 2011. Cree Inc. in Durham, N.C., is introducing a silicon carbide power metal oxide silicon field-effect transistor (MOSFET) power electronics device that can help design engineers develop high-voltage circuits with fast switching speeds and low switching losses in industrial power applications such as high-voltage power supplies and power conditioning.

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DURHAM, N.C., 18 Jan. 2011. Cree Inc. in Durham, N.C., is introducing a silicon carbide power metal oxide silicon field-effect transistor (MOSFET) power electronics device that can help design engineers develop high-voltage circuits with fast switching speeds and low switching losses in industrial power applications such as high-voltage power supplies and power conditioning.The CMF20120D silicon carbide MOSFET, provides blocking voltages of as much as 1200 volts. the device is for high-voltage electronics applications where energy efficiency is critical.

Over the next several years, silicon carbide power switches and diodes also could expand into motor drive control, electric vehicles, and wind energy applications, Cree officials say. The market for power semiconductors in these applications is estimated at about $4 billion today, reaching nearly $6 billion by 2015.

For more information contact Cree online at www.cree.com.

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