Radiation-hardened MOSFET power electronics devices for satellite and space payload applications introduced by IR

EL SEGUNDO, Calif., 26 Dec. 2010. International Rectifier (IR) in El Segundo, Calif., is introducing a family of hermetic radiation-hardened 100-volt metal oxide semiconductor field effect transistors (MOSFETs) in a compact surface-mount SMD0.2 package for space applications such as satellite bus power systems and payload power supplies.

Dec 26th, 2010
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EL SEGUNDO, Calif., 26 Dec. 2010. International Rectifier (IR) in El Segundo, Calif., is introducing a family of hermetic radiation-hardened 100-volt metal oxide semiconductor field effect transistors (MOSFETs) in a compact surface-mount SMD0.2 package for space applications such as satellite bus power systems and payload power supplies.

IR’s rad-hard MOSFET package uses aluminum nitride (AlN) ceramic for enhanced thermal conductivity, is for rad-hard MOSFETs and reduces weight and system size. The packages measures 0.3 by 0.2 by 0.1 inches and weighs 0.25 grams, and dissipates power at about 23 Watts.

Versions that resist 100 and 300 kilorads of total-dose radiation are available, with single-event-upset ratings of 85MeV/(mg/cm2). Standard and logic level N-channel and P-channel devices are also available. Voltages other than 100 volts are also available on request. The SMD0.2 package is available with either metal lid or ceramic lid.

For more information contact International Rectifier online at www.irf.com.

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