Silicon photodiodes for electro-optical applications that block near-infrared introduced by OSI

HAWTHORNE, Calif. – OSI Optoelectronics, an OSI Systems company in Hawthorne, Calif., is introducing UV-enhanced planar diffused silicon photodiodes for applications that call for blocking the near-infrared spectral region.

Dec 15th, 2017
Silicon photodiodes for electro-optical applications that block near-infrared introduced by OSI
Silicon photodiodes for electro-optical applications that block near-infrared introduced by OSI
HAWTHORNE, Calif. – OSI Optoelectronics, an OSI Systems company in Hawthorne, Calif., is introducing UV-enhanced planar diffused silicon photodiodes for electro-optical applications that call for blocking the near-infrared spectral region.

Designed for low-light detection in the ultraviolet spectral range, these products include the UVD planar diffused and UVE planar diffused IR suppressed devices.

The UVD and UVE photodiodes exhibit advantages over technology used in competing devices such as inversion layer photodiodes, including lower capacitance and higher response times.

OSI Optoelectronics' UVD photodiodes peak at 970 nanometers, and the UVE devices peak at 720 nanometers and suppress the near-infrared.

Both products can be biased for low capacitance, wide dynamic range, and high speed response times. Alternatively, the UVD and UVE series may be operated in the photovoltaic (unbiased) mode for situations that require low drift with temperature variations.

Available in varying sizes and footprints, in metal or ceramic packages, OSI's UV-enhanced planar diffused Si photodiodes are for applications in medical instrumentation, pollution monitoring, spectroscopy, fluorescence, water purification, and UV exposure meters.

For more information contact OSI Optoelectronics online at www.osioptoelectronics.com.

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