GaN RF and microwave amplifier for S-Band radar applications introduced by Comtech PST

MELVILLE, N.Y., 13 Feb. 2015. Comtech PST Corp. in Melville, N.Y., is introducing the BMPC318358-900 gallium nitride (GaN) amplifier for S-Band radar applications. The AB linear design operates over the 3.1-to 3.5 GHz RF and microwave frequency band and can be modified also to support 2.9-tp3.1 GHz radar applications.

Feb 13th, 2015
By Mil & Aero staff
By Mil & Aero staff

MELVILLE, N.Y., 13 Feb. 2015. Comtech PST Corp. in Melville, N.Y., is introducing the BMPC318358-900 gallium nitride (GaN) amplifier for S-Band radar applications. The AB linear design operates over the 3.1-to 3.5 GHz RF and microwave frequency band and can be modified also to support 2.9-tp3.1 GHz radar applications.

The amplifier has options for control of phase and amplitude to allow for integration into high-power systems using conventional binary or phased array combining approaches for power levels to 10 kilowatts.

Consistent with its planned technology development roadmap, Comtech is leading the field with in GaN-based RF device performance and advanced amplifier development.

Related: GaN RF and microwave amplifier for X-band radar applications introduced by Comtech PST

The amplifier operates in temperatures from 0 to 55 degrees Celsius, meets MIL-STD-810F for shock and vibration, operates at altitudes to 10,000 feet, measures 10.1 by 6.33 by 1.6 inches, and weighs 5 pounds.

For more information contact Comtech PST online at www.comtechpst.com.

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