GaN-on-SiC HEMT for L-band pulsed radar applications introduced by M/A-COM Technology

LOWELL, Mass., 21 May 2013. M/A-COM Technology Solutions Inc. in Lowell, Mass., is introducing the MAGX-001214-500L00 gallium nitride-on-silicon carbide high-electron mobility transistor (GaN SiC HEMT) for L-band pulsed radar applications.

Posted by John Keller
Posted by John Keller

LOWELL, Mass., 21 May 2013. M/A-COM Technology Solutions Inc. in Lowell, Mass., is introducing the MAGX-001214-500L00 gallium nitride-on-silicon carbide high-electron mobility transistor (GaN SiC HEMT) for L-band pulsed radar applications.

The gold-metalized pre-matched GaN-on-SiC RF and microwave transistor provides 500 Watts of output power with 19 decibels of gain and 55 percent efficiency. The device also boasts high breakdown voltages, which allows for operation at 50 volts under more extreme load mismatch conditions, company officials say.

For more information contact M/A-COM online at www.macomtech.com.

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