LA FOX, Ill., 4 July 2012. Richardson RFPD Inc. in LaFox, Ill., is introducing two laterally diffused metal oxide semiconductor (LDMOS) transistors from Freescale Semiconductor Inc. for applications involving harsh conditions, including HF-UHF transmitters and transceivers, television transmitters, white space data transceivers, aerospace and defense systems, test equipment, and radar systems.

The two RF and microwave power electronics LDMOS FETs have enhanced ruggedness of 65-to-1 voltage standing wave ratio (VSWR) and operation over 1 MHz to 2 GHz frequency range. The transistors can deliver continuous-wave (CW) power over the entire operating frequency range. Full design support capabilities are included (story continues below).

The combination of integrated stability enhancements and optimized impedances allow for a simpler wideband implementation than previous generations of LDMOS transistors, company officials say.

The devices are housed in Freescale's low-thermal-resistance packaging. For more information contact Richardson RFPD online at www.richardsonrfpd.com.