Microelectronics experts at the Raytheon Co. are enhancing their company's process for producing gallium nitride (GaN)-based semiconductors for advanced military radar systems, electronic warfare (EW), and other RF and microwave technologies. Officials of the U.S. Air Force Research Laboratory and the Office of the Secretary of Defense have awarded a $14.9 million contract for the Raytheon Integrated Defense Systems segment in Tewksbury, Mass., to enhance GaN semiconductor manufacturing. The pact follows a previous GaN Title III contract, which Raytheon completed in 2013, and aims to increase the performance, yield, and reliability of Raytheon GaN-based, wideband, monolithic, microwave-integrated circuits (MMICs) and circulator components. GaN is a semiconductor material that can amplify high power radio frequency signals efficiently at microwave frequencies to enhance a system's range. GaN technology takes part in military radars and defense systems, including the U.S. Navy's Air and Missile Defense Radar and Next Generation Jammer.