Enhanced Memory unveils 10 ns EDRAM

Officials of Enhanced Memory Systems Inc. of Colorado Springs, Colo., are announcing a new family of enhanced dynamic random access memory (EDRAM) chips with 10-nanosecond read or write speed within a page of memory. Each EDRAM also features 25-nano- second random access speed to any page of memory and support for non-interleave burst rates as fast as 100 MHz. The device is the world`s fastest production DRAM when measured by random access speed and sustained bandwidth, company officials claim.

Officials of Enhanced Memory Systems Inc. of Colorado Springs, Colo., are announcing a new family of enhanced dynamic random access memory (EDRAM) chips with 10-nanosecond read or write speed within a page of memory. Each EDRAM also features 25-nano- second random access speed to any page of memory and support for non-interleave burst rates as fast as 100 MHz. The device is the world`s fastest production DRAM when measured by random access speed and sustained bandwidth, company officials claim. The solid-state memory chips are intended for communications bridgers and routers, high-speed I/O modules, digital signal processing systems, and high- °performance 3-D rendering. - J.K.

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