RFMD introduces GaN transistor product family at IMS 2006

SAN FRANCISCO, 14 June 2006. RFMD, a designer and manufacturer of radio systems and solutions for applications that drive mobile communications, has introduced a family of Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) high-power transistors.

Jun 14th, 2006

By Courtney E. Howard

SAN FRANCISCO, 14 June 2006. RFMD, a designer and manufacturer of radio systems and solutions for applications that drive mobile communications, has introduced a family of Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) high-power transistors.

The company is sampling to top-tier cellular infrastructure and WiMAX base station customers. The sampling of these transistors represents the achievement of a baseline 0.5um GaN high-power transistor process by RFMD.

The new devices offer peak drain efficiency up to 67 percent at UMTS and up to 60 percent at WiMAX frequency bands.

RFMD has achieved high gain of 16dB, high power density of up to 4W/mm at 28V and 1,000-hour high-temperature reliability results.

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