Posted by John Keller
CHELMSFORD, Mass., 28 March 2010. Hittite Microwave Corp., in Chelmsford, Mass., is introducing two GaAs pHEMT based power amplifier MMIC die for military, microwave radio, SATCOM, automotive radar, medical, and sensor applications from 24 to 29.5 GHz.
The HMC863 is a three stage GaAs pHEMT MMIC 1/2 Watt power amplifier that operates from 24 to 29.5 GHz and provides 26 dB gain and 28 dBm saturated output power at 18 percent power added efficiency (PAE).
This high linearity amplifier also delivers high output IP3 of +38 dBm, while consuming only 375 milliamps from a 6-volt power supply. The HMC863 power amplifier can also be operated from a 5-volt supply, offering as much as 26.5 dBm saturated output power.
Also released is the HMC864 three stage GaAs pHEMT MMIC 1 Watt power amplifier that operates from 24 to 29.5 GHz with 26 dB gain, and 31 dBm of saturated output power at 18 percent PAE.
The HMC864 consumes 750 milliamps from a 6-volt supply, while delivering +29 dBm output P1dB, and 40 dBm output IP3. This amplifier can also be operated from a 5-volt supply, providing as much as 29.5 dBm saturated output power.
The RF inputs and outputs of the HMC863 and HMC864 power amplifiers are DC blocked and matched to 50 Ohms for ease of integration into multi-chip-modules (MCMs). Both amplifiers are rated for operation from -55 to 85 degrees Celsius, and require no external matching components.
For more information contact Hittite online at www.hittite.com.
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