HOUSTON, 30 Jan. 2007. Mimix Broadband Inc. in Houston is introducing a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) three-stage power amplifier with a temperature-compensated output detector.
Using 0.15 micron gate length GaAs pseudomorphic high electron mobility transistor (pHEMT) device model technology, the power amplifier covers the 17 to 25 GHz frequency bands and has a signal gain of 20 decibels with +28 dBm P1dB compression point.
The XP1022 die includes on-chip ESD protection and is available in an RoHS compliant 4-by-4-millimeter QFN Surface Mount Package for RF and thermal properties.
This power amplifier, identified as XP1022-BD for the bare die device or XP1022-QF for the QFN package, is for wireless communications applications such as millimeter-wave point-to-point radio, local multipoint distribution services (LMDS), and satellite applications.
Mimix performs 100 percent RF, DC and output power testing on the XP1022, as well as 100 percent visual inspection to MIL-STD-883 method 2010 for the bare die. The chips also have surface passivation to protect and provide rugged parts with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.
For more information contact Mimix Broadband online at www.mimixbroadband.com.
