InGaAs avalanche photodiode for light level detection and signal transmission introduced by OSI

EDISON, N.J. – OSI Laser Diode Inc. in Edison, N.J., is introducing the LAPD 3050 indium gallium arsenide (InGaAs) avalanche photodiode module for electro-optical applications in light level detection and signal transmission.

By Mil & Aero staff
By Mil & Aero staff

EDISON, N.J. – OSI Laser Diode Inc. in Edison, N.J., is introducing the LAPD 3050 indium gallium arsenide (InGaAs) avalanche photodiode module for electro-optical applications in light level detection and signal transmission.

The overload-tolerant LAPD 3050 device is for use in optical time-domain reflectometers (OTDRs), line receivers, and long-haul applications.

The 50-micron active area device features low dark current, low back reflection, and 2.5 Ghz speed in a miniature package. With spectral response from 1000 to 1650 nanometers at 25 degrees Celsius, the typical operational wavelength is 1550 nanometers. The avalanche photo diode is housed in a hermetically sealed 3-pin coaxial package and coupled to a single-mode fiber pigtail.

The breakdown voltage is from 50 volts minimum to 70 volts maximum, and operating and storage temperatures range from -40 to 85 C.

For more information contact OSI Laser Diode online at www.laserdiode.com.

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