MUNICH – Infineon Technologies AG in Munich is introducing radiation-tolerant 256-megabit and 512-megabit NOR non-volatile Flash memory chips for space applications that involve field-programmable gate array (FPGA) configuration, image storage, microcontroller data, and boot code storage.
Qualified to MIL-PRF-38535’s QML-V flow (QML-V equivalent) the devices offer high quality and reliability standard certification for aerospace-grade integrated circuits.
Infineon’s 256-megabit and 512-megabit radiation-tolerant NOR Flash non-volatile memories deliver a low-pin-count, single-chip solution. When used at high clock rates, the data transfer supported by the devices match or exceed traditional parallel asynchronous NOR Flash memories.
The devices are radiation-tolerant to 30 kilorads (Si) biased and 125 kilorads (Si) unbiased. At 125 degrees Celsius, the devices support 1,000 program/erase cycles and 30 years of data retention and at 85 C 10,000 program/erase cycles with 250 years of data retention.
Infineon leveraged the 65-nanometer floating gate Flash process technology to develop the radiation-tolerant 256-megabit quad-SPI (QSPI) and 512-megabit dual quad-SPI NOR Flash.
Both are featuring 133 MHz SDR interface speed. The 512-megabit device comprises two independent 256-megabit die that fit side by side in a single package solution. This provides flexibility for designers to operate the device in dual QSPI or single QSPI mode on either die independently.
Infineon is collaborating closely with FPGA ecosystem companies such as Xilinx on space-grade applications. The NOR Flash devices can be programmed in-system through the FPGA or through a stand-alone programmer, offered in the same 36-lead ceramic flat package. Infineon’s development kit and software further enable easy design implementation.
For more information contact Infineon online at https://www.cypress.com/products/radiation-hardened-memory.