EDI unveils 3.3-volt SRAM for DSPs

Engineers at Electronic Designs Inc. (EDI) of Westborough, Mass., built a new high-speed asynchronous 3.3-volt 16-megabit static random access memory. Called the EDI8L32512V, the SRAM has access times of 15, 17, and 20 nanoseconds, which enables the creation of a no-wait-state memory for digital signal processing (DSP) applications. Systems designers can use the device as a 512K by 32 for single-chip external data memory with the Texas Instruments TMS320LC31 or with the Analog Devices SHARC DSPs

Engineers at Electronic Designs Inc. (EDI) of Westborough, Mass., built a new high-speed asynchronous 3.3-volt 16-megabit static random access memory. Called the EDI8L32512V, the SRAM has access times of 15, 17, and 20 nanoseconds, which enables the creation of a no-wait-state memory for digital signal processing (DSP) applications. Systems designers can use the device as a 512K by 32 for single-chip external data memory with the Texas Instruments TMS320LC31 or with the Analog Devices SHARC DSPs. The device`s four chip enables can also configure the device as 1M by 16, or as 1M by 48 using three devices. For more information, contact EDI`s Liz Marsolais by phone at 508-366-5151, ext. 214. - J.K.

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