Breakthrough in nitride integrated circuits is aim of $16.2 million DARPA contract to TriQuint Semiconductor

ARLINGTON, Va.–TriQuint Semiconductor Inc. in Hillsboro, Ore., won a $16.2 million research contract from the U.S. Defense Advanced Research Projects Agency (DARPA) in Arlington, Va., to make technological breakthroughs in nitride integrated circuits (ICs) and other electronic devices.

ARLINGTON, Va.–TriQuint Semiconductor Inc. in Hillsboro, Ore., won a $16.2 million research contract from the U.S. Defense Advanced Research Projects Agency (DARPA) in Arlington, Va., to make technological breakthroughs in nitride integrated circuits (ICs) and other electronic devices.

TriQuint experts are investigating revolutionary advances in nitride semiconductor technology to enable these devices to operate at very high frequencies while maintaining extremely favorable voltage breakdown characteristics.

Doing the work on this DARPA research contract are experts at the TriQuint millimeter wave, physical layer optoelectronics, and Texas foundry operations segment in Richardson, Texas.

This DARPA project is called Nitride Electronic NeXt-Generation Technology (NEXT), which is under supervision of Mark Rosker in the DARPA Microsystems Technology Office (MTO). The MTO is responsible for enabling new platform capabilities by exploiting breakthroughs in circuits, devices, materials, and mathematics for beyond-leading-edge components with revolutionary performance for the U.S. Department of Defense (DOD).

For additional information, visit DARPA MTO online at www.darpa.mil/MTO, or TriQuint Semiconductor at www.triquint.com.

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