Discovery Semiconductors offers custom InGaAs photodiodes for naval applications

EWING, N.J., 16 Sept. 2005. Discovery Semiconductors Inc. in Ewing, N.J., is delivering custom dual indium gallium arsenide (InGaAs) photodiodes for 2-18 GHz electronic warfare (EW) applications.

EWING, N.J., 16 Sept. 2005. Discovery Semiconductors Inc. in Ewing, N.J., is delivering custom dual indium gallium arsenide (InGaAs) photodiodes for 2-18 GHz electronic warfare (EW) applications.

Features include small form factor, hermetic package, operating temperature from -20 to 70 degrees Celsius, optical return loss of 40 decibels, and flat RF response from 2 to 18 GHz with a 3-decibel bandwidth of 22 GHz.

The typical responsivity of each photodiode is 0.75 A/W across the 1520-to-1590-nanometer wavelength. Responsivity variation at operating temperature is less than 5 percent, which relaxes tolerances for RF link gain.

"We built a custom package for dual photodiodes with negligible RF and optical cross talk, as well as an identical footprint to our standard 3-pin photodiode package, which enabled us to lower the cost for our customer," says Dan Mohr, senior engineer at Discover.

Discovery Semiconductors specializes in 10 gigabit-per-second and 40 gigabit-per-second optical receivers. The company makes ultrafast, high optical power handling InGaAs photodetectors, radio frequency over fiber optical receivers, balanced optical receivers and other custom products for applications ranging from analog RF links to ultrafast digital communications.

For more information contact Discovery online at www.chipsat.com.

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