MRAM-based radiation hardened non-volatile memory products for space introduced by Cobham

COLORADO SPRINGS, Colo., 18 Feb. 2016. Cobham Semiconductor Solutions in Colorado Springs, Colo., is announcing QML V radiation hardened certification of their non-volatile semiconductor memory products. QML V involves especially rugged microelectronics devices that are qualified for space applications.

Feb 18th, 2016
By Mil & Aero staff
By Mil & Aero staff

COLORADO SPRINGS, Colo., 18 Feb. 2016. Cobham Semiconductor Solutions in Colorado Springs, Colo., is announcing QML V radiation hardened certification of their non-volatile semiconductor memory products. QML V involves especially rugged microelectronics devices that are qualified for space applications.

Cobham Semiconductor Solutions (formerly Aeroflex) uses Magnetoresistive Random-Access Memory (MRAM) intellectual property from Everspin Technologies Inc. in Chandler, Ariz., to help achieve QML V for these non-volatile products.

The MRAM-based product offering includes a 64-megabit device, UT8MR8M8, offered in a 40-lead quad flatpack, and a 16-megabit device, UT8MR2M8, available in a 40-lead flatpack. Both are in production and have been designed into various future satellites, company officials say.

"Using an IP license from Everspin, Cobham has taken commercial MRAM technology and enhanced the IP for specialized aerospace and defense applications," explains Anthony Jordan, vice-president of product marketing and applications engineering at Cobham Semiconductor Solutions.

Related: Radiation-hardened A/D converters for military and space applications introduced by Aeroflex RAD

MRAM technology provides a combination of fast access time, non-volatility, data retention and endurance. MRAM technology operates as an SRAM with non-volatile attributes. Cobham's high-reliability MRAM solutions are used with microprocessors, DSP engines, storage systems, instruments, and reconfigurable FPGAs.

The 3-volt MRAMs have guaranteed operation from -40 to 105 degrees Celsius, radiation hardiness of 100 kilorads (Si) to 1 megarad, and are SEL immune to >100 MeV-cm2. As a replacement for 3.3-volt SRAMs, the MRAMs are 8-bit parallel I/O solutions with data retention after each write of 20 years and virtually infinite read/write endurance. They are designed for working memory applications that require high rates of data overwrites.

The radiation-hardened UT8MR2M8 (SMD5962-12227) and the UT8MR8M8 (SMD 5962-13207) are QML Q, Q+ and V qualified and available to Standard Microcircuit Drawings.

For more information contact Cobham Semiconductor Solutions online at www.cobham.com/HiRel.

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