GaN HEAT power transistors and power amplifiers for air traffic control and radar introduced by Cree
DURHAM, N.C., 3 June 2011. Cree Inc. in Durham, N.C., is introducing the CGH31240F and CGH35240F gallium nitride (GaN) high-electron mobility transistors (HEAT) and high-power amplifier (HPA) monolithic microwave integrated circuits (MMICs) in the 2.7-3.5 GHz range (S-Band) for air traffic control, weather radar, and homeland defense applications. These RF and microwave devices combine power and efficiency for typical power-added efficiencies of 60 percent, Cree officials say, which can reduce power consumption by as much as 20 percent when compared with existing parts.
The CMPA2735075F is a two-stage GaN HEAT high power MMIC amplifier providing a saturated RF output power of 75 Watts over 2.7 to 3.5 GHz with a power gain of 20dB in a package measuring 0.5 by 0.5 inches. It offers 60 percent typical PAE with RF pulse widths of 300 microseconds and a 20 percent duty cycle.
For more information contact Cree online at www.cree.com/rf.