SAN JOSE, Calif., 26 July 2008.Cypress Semiconductor Corp. introduced 2-Mbit and 8-Mbit non-volatile static random access memories (nvSRAMs), extending Cypress's nvSRAM portfolio from 16-Kbit to 8-Mbit. The new devices boast access times as low as 20 ns; infinite read, write, and recall cycles; and 20-year data retention.
The new offerings are well suited to applications requiring continuous high-speed writing of data and absolute non-volatile data security. Systems requiring nvSRAM functionality include servers, RAID applications, harsh-environment industrial controls, and data communications.
The CY14B102 2-Mbit nvSRAM and CY14B108 8-Mbit nvSRAM are ROHS-compliant and replace SRAM, battery-backed SRAM, EPROM, and EEPROM devices, offering reliable non-volatile data storage without batteries.
Data transfers from the SRAM to the device's nonvolatile elements take place automatically at power down. On power up, data is restored to the SRAM from the nonvolatile memory. Both operations are available under software control.
The new nvSRAMs are manufactured on Cypress's S8 0.13-micron SONOS (Silicon Oxide Nitride Oxide Silicon) embedded nonvolatile memory technology, enabling greater densities and improved access times and performance.
nvSRAMs offer an alternative for fast, non-volatile memory, reducing board space and design complexity compared to battery-backed SRAMs. They are reportedly more economical and reliable than magnetic (MRAM) or ferroelectric (FRAM) memories.
