FORT BELVOIR, Va., 30 Nov. 2012. The U.S. Defense Threat Reduction Agency (DTRA) at Fort Belvoir, Va., is surveying industry to find companies expertise in radiation hardening expertise in advanced high frequency analog and RF semiconductor technologies.
DTRA officials released a request for information (NTS139926578) Wednesday for the Research and Development and Mitigation Techniques in Advanced High Frequency Analog and RF Semiconductor Technologies program for rad-hard semiconductors.
DTRA would like to hear from companies able to do radiation testing, modeling, and simulation to assess the analog and RF performance of high frequency semiconductors for single-event-effects (SEE) and total ionizing dose (TID) radiation.
DTRA also is interested the ability to do rad-hard modeling, simulation, and rad-hard-by-design mitigation techniques for semiconductors with geometries smaller than 90 nanometers. Device types include silicon germanium bipolar complementary metal oxide semiconductor (BiCMOS) and silicon germanium heterojunction bipolar transistor (SiGe HBTs).
Other device types of interest include 45-nanometer silicon-on-insulator (SOI) chips, gallium nitride heterostructure field-effect transistor (GaAn HFET) power semiconductors, and other rad-hard microelectronics and photonic devices for present and future military systems such as satellites and missiles.
Companies interested should respond with two-page white papers no later than 31 Dec. 2011. Email white papers to DTRA's Debra Mudd at [email protected]. For questions or concerns contaCt Mudd by email or by phone at 703-767-0782.
More information is online at https://www.fbo.gov/spg/ODA/DTRA/DTRA01/NTS139926578/listing.html.