ESSEX, United Kingdom, 12 Oct. 2009. Officials at e2v Technologies announced today the production availability of the EV2A16A magnetoresistive random access memory (MRAM) - an extended-reliability version of the MR2A16A from Everspin Technologies in Chandler, Ariz., offering fast read and write cycle times (35 ns), with non-volatility and unlimited read and write endurance for use in defense, avionics, and industrial applications.
Operating from -55 to 125 degrees Celsius, this integrated crcuit is the first in a product family of high-reliability MRAMs based on the partnership between e2v and Everspin Technologies. It is designed for use in systems such as flight computers, graphics displays, power plant control, and field networking systems where high reliability electronics are required.
e2v's EV2A16A is a small form-factor parallel MRAM (16-bit) that features a density of 4 megabytes, configuration of 256K by 16 and is SRAM compatible using existing SRAM controllers without the need for redesign. Data is non-volatile, providing more than 20 years of data retention making it useful for applications where permanent and rapid data storage and retrieval is needed without the requirement for battery backup, e2v officials say.
"Aerospace and defence system designers are demanding product solutions that combine the latest memory storage technology with an extended-reliability IC product", says Eric Marcelot, e2v's hi-rel microprocessors marketing manager.
The EV2A16A is now available in a thin small outline package (TSOP) and a 11 44 pin package.
