ISL70023SEH/24SEH

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Sept. 14, 2018
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Shared User Pr643cfd9aac124a3281ce9b71a7a1f749
100V N-channel enhancement mode GaN power transistors. These GaN FETs have been characterized for destructive SEE and tested for TID radiation up to 100krad(Si) HDR and 75krad(Si) LDR.

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