Now at Mouser: Navitas Semiconductor 3300V & 2300V Silicon Carbide (SiC) MOSFETs

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June 18, 2026
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Courtesy of Mouser Electronics, Inc.
Navitas Semiconductor 3300V & 2300V Silicon Carbide (SiC) MOSFETs

Navitas Semiconductor 3300V and 2300V Silicon Carbide (SiC) MOSFETs are based on the latest GeneSiC™ trench-assisted planar (TAP) technology and feature flexible packaging formats, including power module, discrete, and known good die (KGD). For high-power density and high-reliability systems, the MOSFETs are integrated into an advanced SiCPAK™ G+ power module package, in half-bridge and full-bridge circuit configurations.

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