March 5, 2018
Custom MMIC leverages our deep understanding of gallium nitride (GaN), gallium arsenide (GaAs) heterojunction bipolar transistors (HBT), and pseudomorphic high electron mobility transistors (pHEMT) technology to deliver the RF / Microwave industry’s most advanced MMIC amplifiers. Our expert integrated circuit (IC) engineering teams have been designing innovative MMIC power amplifiers (PAs), low noise amplifiers (LNAs), low phase noise amplifiers (LPNAs), distributed amplifiers, and driver amplifiers for over a decade. They meet the needs of the most demanding RF, microwave, and millimeter-wave military, space and instrumentation system design requirements. Working closely with the foremost MMIC foundries, Custom MMIC continues to push GaAs and GaN performance boundaries with products up to 50 GHz utilizing a wide range of semiconductor processes.

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