Opto Diode announces high-power GaAlAs IRLED illuminator for covert aircraft lighting

CAMARILLO, Calif., - Opto Diode Corporation, an ITW company, has introduced an infrared light-emitting diode (IRLED) in a TO-66 package for heatsink attach, the OD-669. The gallium aluminum arsenide (GaAlAs) IRLED illuminator features a peak emission of 880 nm with an extremely wide angle of emission.

Designed with nine chips connected in series, the device is housed in an electrically-isolated case, making it suitable for covert aircraft lighting or covert anti-collision lighting in aviation applications.

Total power output ranges from 390 mW (minimum) to 500 mW (typical) under test conditions at 300 mA. The spectral bandwidth at 50% is 80 nm, and the half intensity beam angle is typically 120 degrees. The forward voltage of the OD-669 ranges from 13.5 volts (typical) to 15 volts (maximum); reverse breakdown voltage is at minimum 5 volts and 30 volts (typical). Capacitance is 11 pF; the rise time and fall time is typically 3 µsec.

Thermal parameters include the storage and operating temperature ranges of -55 °C to 100 °C and the maximum junction temperature of 100 °C.

To learn more, please visit www.optodiode.com.