Photodiodes for laser power monitoring and metrology introduced by Opto Diode

Opto Diode Corp. in Camarillo, Calif., is introducing the SXUV100TF135 and SXUV100TF135B photodiodes with integrated thin-film filters for electro-optical applications such as laser power monitoring, semiconductor photolithography, and metrology systems that use extreme ultraviolet light.

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CAMARILLO, Calif. - Opto Diode Corp. in Camarillo, Calif., is introducing the SXUV100TF135 and SXUV100TF135B photodiodes with integrated thin-film filters for electro-optical applications such as laser power monitoring, semiconductor photolithography, and metrology systems that use extreme ultraviolet light.

Laser power monitoring, semiconductor photolithography, and metrology are potential applications for Opto Diode photodiodes.

The detectors have a 100-square-millimeter active area and a directly deposited thin-film filter for detection between 12 and 18 nanometers. Both detectors have typical responsivity of 0.09 A/W at 13.5 nanometers.

The SXUV100TF135 model is optimized for high-speed reverse bias voltage operation. The device has low capacitance, typically 260 picofarads, with a reverse bias voltage of 12 volts. The SXUV100TF135B is optimized for zero bias voltage operation where low dark current is of paramount importance. The detector has a high shunt resistance greater than 10 micro-ohms.

Opto Diode's photodiodes with integrated thin-film filters offer stability and a design for extreme ultraviolet environments. Operating and storage temperatures range from -10 to 40 degrees Celsius in ambient environments and from -20 to 80 degrees C in nitrogen or vacuum environments. The devices are shipped with protective covers.

For more information visit Opto Diode online at http://optodiode.com.

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