4-layer metal interconnect offered for SOI ASICs

Integrated circuit designers at the Honeywell Inc. Solid State Electronics Center in Plymouth, Minn., are offering a four-layer metal interconnect for silicon-on-insulator (SOI) application-specific integrated circuit (ASIC) gate arrays. This extra layer of metal yields 50 percent more usable gates for existing ASICs with the same form, fit, and function. The four-layer metal process is a key feature for the next generation of SOI products, particularly ASICs and custom designs. Honeywell Solid

Jan 1st, 1998

Integrated circuit designers at the Honeywell Inc. Solid State Electronics Center in Plymouth, Minn., are offering a four-layer metal interconnect for silicon-on-insulator (SOI) application-specific integrated circuit (ASIC) gate arrays. This extra layer of metal yields 50 percent more usable gates for existing ASICs with the same form, fit, and function. The four-layer metal process is a key feature for the next generation of SOI products, particularly ASICs and custom designs. Honeywell Solid State has Qualified Manufacturing List certification for its SOI 0.8-micron ASIC products and has a long-term commitment to radiation-hardened ASICs, company officials say. - J.K.

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