High-linearity 250-to-3000-MHz RF and microwave driver amplifier introduced by M/A-Com Tech

LOWELL, Mass., 28 Dec. 2010. M/A-COM Technology Solutions Inc. in Lowell, Mass., is introducing the MAAM-009563 two-stage heterojunction bipolar transistor (HBT) driver amplifier for cellular and Limax infrastructure applications. This driver amplifier covers 250 to 3000 MHz with linearity of 47 dBm output IP3 and typical gain of 19.5 dB.

Dec 28th, 2010
Pennwell web 120 74

LOWELL, Mass., 28 Dec. 2010. M/A-COM Technology Solutions Inc. in Lowell, Mass., is introducing the MAAM-009563 two-stage heterojunction bipolar transistor (HBT)RF and microwave driver amplifier for cellular and Limax infrastructure applications. This driver amplifier covers 250 to 3000 MHz with linearity of 47 dBm output IP3 and typical gain of 19.5 dB.

The broad operation is achieved using external matching components, where component values are selected to center the 200 MHz instantaneous bandwidth within the overall frequency range. The lead-free SOIC-8EP surface mount plastic package is RoHS compliant and compatible with solder reflow temperatures up to 260 degrees Celsius. The ESD susceptibility achieves a class 2 ESD rating.

For more information contact M/A-COM Tech online at www.macomtech.com.

More in Home